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publication date : oct 2011 1 outline drawing 0.2+/-0.05 0 . 2 + / - 0 . 0 5 0 . 9 + / - 0 . 1 index mark (gate) 6.0+/-0.15 4 . 9 + / - 0 . 1 5 terminal no. 1.drain (output) 2.source (gnd) 3.gate (input) note ( ):center value unit:mm 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 1 . 0 + / - 0 . 0 5 (0.25) 2 3 1 3 . 5 + / - 0 . 0 5 2 . 0 + / - 0 . 0 5 (0.25) ( 0 . 2 2 ) ( 0 . 2 2 ) < silicon rf power mos fet ( discrete ) > rd 0 7mus2b rohs compliance, silicon mosfet power transistor ,175mhz,527mhz,870 mhz, 7 w description RD07MUS2B is a mos fet type transistor specifically designed for v hf /uhf/870mhz rf power amplifiers applications. f eatures high power g ain and high efficiency . typical po gp d (175mhz) 7.2w 13.8 db 65 % (527mhz) 8w 13.0db 63 % (870mhz) 7w 11.5db 58 % integrated gate protection diode. application for output stage of high power amplifiers in v hf /uhf/800m hz - band mobile radio sets. rohs compliant rd0 7 m u s2 b is a rohs complian t product. rohs compliance is indicating by the letter ?g? after the lot marking. this product includes the lead in high melting temperature type solders. how ever, it is applicable to the following exceptions of rohs directions. 1. lead in high melting temperature type solders(i.e.tin - lead solder alloys containing more than85% lead.) absolute maximum ratings (tc=25 c unless otherwise noted) symbol parameter conditions ratings unit vdss drain to source voltage vgs=0v 25 v vgss gate to source voltage vds=0v - 5/+10 v pch channel dissipation tc=25 c 50 w pin input power zg=zl=50 ? 0.8* w id drain current - 3 a t ch junction temperature - 150 c tstg storage temperature - - 40 to +1 25 c rth j - c thermal resistance junction to case 2.5 c/w note: above parameters are guaranteed independently. * : 175mhz spec. is 0.6w
< silicon rf power mos fet ( discrete ) > RD07MUS2B rohs compliance, silicon mosfet power transistor ,175mhz,527mhz,870 mhz, 7 w publication date : oct 2011 2 electrical characteristics (tc=25 c , unless otherwise noted) limits unit symbol parameter conditions min typ max. i dss drain cutoff current v ds =17v, v gs =0v - - 10 ua i gss gate cutoff current v gs =5v, v ds =0v - - 1 ua v th gate threshold voltage v ds =7.2v, i ds =1ma 0.5 1 1.5 v pout1 output power - 7.2* - w ? d1 drain efficiency f=175mhz,v dd =7.2v pin=0.3w,idq=250ma - 65* - % pout2 output power 7** 8** - w ? d2 drain efficiency f=527mhz ,v dd =7.2v pin=0.4w,idq=250ma 58** 63** - % pout3 output power - 7*** - w ? d3 drain efficiency f=870mhz ,v dd =7.2v pin=0.5w,idq=250ma - 58*** - % vswrt load vswr tolerance v dd =9.5v,p o=7w(pin control) f=527mhz,idq=250ma,zg=50 ? load vswr=20:1(all phase) no destroy - note: above parameters, ratings, limits and conditions are subject to change. * at 135 - 175mhz broad matching ** at 450 - 527mhz broad matching *** at 763 - 870mhz broad matching
< silicon rf power mos fet ( discrete ) > RD07MUS2B rohs compliance, silicon mosfet power transistor ,175mhz,527mhz,870 mhz, 7 w publication date : oct 2011 3 typical characteristics ( these are only typical curves and devices are not necessarily guaranteed at these curves. ) v ds vs. crss characteristics 0 2 4 6 8 10 12 14 16 18 20 0 5 10 15 20 v ds (v) c r s s ( p f ) ta=+25c f=1mhz v ds vs. ciss characteristics 0 20 40 60 80 100 120 140 160 0 5 10 15 20 v ds (v) c i s s ( p f ) ta=+25c f=1mhz v ds vs. coss characteristics 0 20 40 60 80 100 120 0 5 10 15 20 v ds (v) c o s s ( p f ) ta=+25c f=1mhz v ds -i ds characteristics 0 1 2 3 4 5 6 7 0 2 4 6 8 10 v ds (v) i d s ( a ) ta=+25c 3v 3.5v 2v 2.5v v gs =1.5v v gs -i ds characteristics 0 1 2 3 4 5 6 7 0 0.5 1 1.5 2 2.5 3 v gs (v) i d s ( a ) , g m ( s ) i ds g m ta=+25c v ds =10v
< silicon rf power mos fet ( discrete ) > RD07MUS2B rohs compliance, silicon mosfet power transistor ,175mhz,527mhz,870 mhz, 7 w publication date : oct 2011 4 typical characteristics ( 135 - 175mhz ) ( these are only typical curves and devices are not necessarily guaranteed at these curves. ) f-po characteristics @f=135-175mhz 0 10 20 30 40 50 135 140 145 150 155 160 165 170 175 f (mhz) p o ( d b m ) , g p ( d b ) , i d d ( a ) 0 20 40 60 80 100 d ( % ) ta=+25c vdd=7.2v pin=0.3w idq=250ma po d gp idd f-po characteristics @f=135-175mhz 0 2 4 6 8 10 135 140 145 150 155 160 165 170 175 f (mhz) p o u t ( w ) , i d d ( a ) 0 20 40 60 80 100 d ( % ) po d idd ta=+25c vdd=7.2v pin=0.3w idq=250ma pin-po characteristics @f=175mhz 0 10 20 30 40 50 0 5 10 15 20 25 30 pin(dbm) p o ( d b m ) , g p ( d b ) , i d d ( a ) 0 20 40 60 80 100 d ( % ) ta=+25c f=175mhz vdd=7.2v idq=250ma po d gp idd pin-po characteristics @f=175mhz 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 pin(w) p o u t ( w ) , i d d ( a ) 0 20 40 60 80 100 d ( % ) po d idd ta=+25c f=175mhz vdd=7.2v idq=250ma vdd-po characteristics @f=175mhz 0 5 10 15 20 25 3 4 5 6 7 8 9 10 vdd(v) p o ( w ) 0 1 2 3 4 5 i d d ( a ) ta=+25c f=175mhz pin=0.3w idq=250ma zg=zi=50 ohm idd po vgg-po characteristics @f=175mhz 0 2 4 6 8 10 0 0.4 0.8 1.2 1.6 2 vgg(v) p o ( w ) 0 1 2 3 4 5 i d d ( a ) ta=+25c f=175mhz pin=0.3w idq=250ma zg=zi=50 ohm idd po
< silicon rf power mos fet ( discrete ) > RD07MUS2B rohs compliance, silicon mosfet power transistor ,175mhz,527mhz,870 mhz, 7 w publication date : oct 2011 5 typical characteristics ( 450 - 527mhz ) ( these are only typical curves and devices are not necessarily guaranteed at these curves. ) f-po characteristics @f=450-527mhz 0 10 20 30 40 50 450 460 470 480 490 500 510 520 530 f (mhz) p o ( d b m ) , g p ( d b ) , i d d ( a ) 0 20 40 60 80 100 d ( % ) ta=+25c vdd=7.2v pin=0.4w idq=250ma po d gp idd f-po characteristics @f=450-527mhz 0 2 4 6 8 10 450 460 470 480 490 500 510 520 530 f (mhz) p o u t ( w ) , i d d ( a ) 0 20 40 60 80 100 d ( % ) po d idd ta=+25c vdd=7.2v pin=0.4w idq=250ma pin-po characteristics @f=527mhz 0 10 20 30 40 50 0 5 10 15 20 25 30 pin(dbm) p o ( d b m ) , g p ( d b ) , i d d ( a ) 0 20 40 60 80 100 d ( % ) ta=+25c f=527mhz vdd=7.2v idq=250ma po d gp idd pin-po characteristics @f=527mhz 0 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 pin(w) p o u t ( w ) , i d d ( a ) 0 20 40 60 80 100 d ( % ) po d ta=+25c f=527mhz vdd=7.2v idq=250ma idd vdd-po characteristics @f=527mhz 0 5 10 15 20 25 3 4 5 6 7 8 9 10 vdd(v) p o ( w ) 0 1 2 3 4 5 i d d ( a ) ta=+25c f=527mhz pin=0.4w idq=250ma zg=zi=50 ohm idd po vgg-po characteristics @f=527mhz 0 2 4 6 8 10 0 0.4 0.8 1.2 1.6 2 vgg(v) p o ( w ) 0 1 2 3 4 5 i d d ( a ) ta=+25c f=527mhz pin=0.4w idq=250ma zg=zi=50 ohm idd po
< silicon rf power mos fet ( discrete ) > RD07MUS2B rohs compliance, silicon mosfet power transistor ,175mhz,527mhz,870 mhz, 7 w publication date : oct 2011 6 typical characteristics ( 763 - 870mhz ) ( these are only typical curves and devices are not necessarily guaranteed at these curves. ) f-po characteristics @f=763-870mhz 0 10 20 30 40 50 760 780 800 820 840 860 880 900 920 940 960 f (mhz) p o ( d b m ) , g p ( d b ) , i d d ( a ) 0 20 40 60 80 100 d ( % ) ta=+25c vdd=7.2v pin=0.5w idq=250ma po gp idd f-po characteristics @f=763-870mhz 0 2 4 6 8 10 760 780 800 820 840 860 880 900 920 940 960 f (mhz) p o u t ( w ) , i d d ( a ) 0 20 40 60 80 100 d ( % ) po d idd ta=+25c vdd=7.2v pin=0.5w idq=250ma pin-po characteristics @f=870mhz 0 10 20 30 40 50 0 5 10 15 20 25 30 pin(dbm) p o ( d b m ) , g p ( d b ) , i d d ( a ) 0 20 40 60 80 100 d ( % ) ta=+25c f=870mhz vdd=7.2v idq=250ma po gp idd pin-po characteristics @f=870mhz 0 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 pin(w) p o u t ( w ) , i d d ( a ) 0 20 40 60 80 100 d ( % ) po d ta=+25c f=870mhz vdd=7.2v idq=250ma idd vdd-po characteristics @f=870mhz 0 5 10 15 20 25 3 4 5 6 7 8 9 10 vdd(v) p o ( w ) 0 1 2 3 4 5 i d d ( a ) ta=+25c f=870mhz pin=0.5w idq=250ma zg=zi=50 ohm idd po
< silicon rf power mos fet ( discrete ) > RD07MUS2B rohs compliance, silicon mosfet power transistor ,175mhz,527mhz,870 mhz, 7 w publication date : oct 2011 7 typical characteristics ( vds=3.6v ) ( these are only typical curves and devices are not necessarily guaranteed at these curves. ) f-po characteristics @f=450-530mhz 0 2 4 6 8 10 450 460 470 480 490 500 510 520 530 f (mhz) p o u t ( w ) , i d d ( a ) 0 20 40 60 80 100 d ( % ) po d idd ta=+25c vdd=3.6v pin=0.3w idq=250ma f-po characteristics @f=800-870mhz 0 2 4 6 8 10 800 810 820 830 840 850 860 870 f (mhz) p o u t ( w ) , i d d ( a ) 0 20 40 60 80 100 d ( % ) po d idd ta=+25c vdd=3.6v pin=0.5w idq=250ma pin-po characteristics @f=520mhz 0 10 20 30 40 50 0 5 10 15 20 25 30 pin(dbm) p o ( d b m ) , g p ( d b ) , i d d ( a ) 0 20 40 60 80 100 d ( % ) ta=+25c f=520mhz vdd=3.6v idq=250ma po gp idd pin-po characteristics @f=870mhz 0 10 20 30 40 50 0 5 10 15 20 25 30 pin(dbm) p o ( d b m ) , g p ( d b ) , i d d ( a ) 0 20 40 60 80 100 d ( % ) ta=+25c f=870mhz vdd=3.6v idq=250ma po gp idd application note : an - 900 - 041 the detail of this application is shown in application note.
< silicon rf power mos fet ( discrete ) > RD07MUS2B rohs compliance, silicon mosfet power transistor ,175mhz,527mhz,870 mhz, 7 w publication date : oct 2011 8 typical characteristics ( 380 - 430mhz ) ( these are only typical curves and devices are not necessarily guaranteed at these curves. ) pin-po characteristics @f=380-430mhz 0 10 20 30 40 50 0 5 10 15 20 25 30 pin(dbm) p o ( d b m ) , g p ( d b ) , i d d ( a ) 0 20 40 60 80 100 d ( % ) ta=+25c f=380mhz vdd=7.2v idq=250ma po gp idd po-acp characteristic -60 -50 -40 -30 -20 -10 0 20 25 30 35 40 po (dbm ) a c p ( d b c ) -40 -20 0 20 40 60 80 g a i n ( d b ) , d ( % ) acp_1l acp_1h gain d ta=+25c f=380mhz vdd=7.2v idq=250ma the detail of this application is shown in application note(an - uhf - 105.)
< silicon rf power mos fet ( discrete ) > RD07MUS2B rohs compliance, silicon mosfet power transistor ,175mhz,527mhz,870 mhz, 7 w publication date : oct 2011 9 test circuit(f=135 - 175mhz) test circuit(f=450 - 527mhz) 100pf 140pf rf-in 3.5mm 22pf w 4.7k ohm c1 w c2 2 2 f , 5 0 v 20pf 7.5mm 1.5mm 4.5mm 21mm 5mm 9.5mm 2.2 ohm 7.5mm l1 3.5mm 21mm 2.5mm 62pf rf-out vgg vdd RD07MUS2B (f=135-175mhz) l1,l2:enameled wire 6 turns,d:0.23mm,1.66mm o.d l3,l5:enameled wire 2 turns,d:0.23mm,1.66mm o.d l4 :enameled wire 4 turns,d:0.43mm,1.66mm o.d c 1 , c 2 : 1 0 0 0 p f , 0 . 0 0 2 2 f i n p a r a l l e l note:board material glass-epoxy substrate micro strip line width=1.3mm/50 ohm,er:4.8,t=0.8mm w:line width=1.0mm 43pf 100pf l5 l4 5.5mm 3mm 22pf l3 1mm 3mm 3mm l2 2.5mm 100pf 12pf rf-in 4mm 24pf w 4.7k ohm c2 22 f , 50 v 8pf 0.5mm 10mm 4mm 21mm 5mm 1mm 3mm l1 2.5mm 21mm 5.5mm 100pf rf-out vgg vdd RD07MUS2B (f=450-527mhz) l1:enameled wire 5 turns,d:0.43mm,2.46mm o.d l2:enameled wire 2 turns,d:0.23mm,1.66mm o.d c 1 , c 2 : 1000 pf , 0 . 0022 f in parallel note:board material glass-epoxy substrate micro strip line width=1.3mm/50 ohm,er:4.8,t=0.8mm w:line width=1.0mm 8pf 9pf 24pf 4.5mm 6mm l2 7.5mm c1 5.5mm 1mm 8pf 12pf 54pf w
< silicon rf power mos fet ( discrete ) > RD07MUS2B rohs compliance, silicon mosfet power transistor ,175mhz,527mhz,870 mhz, 7 w publication date : oct 2011 10 test circuit(f=763 - 870mhz) 150pf rf-in 19mm 10pf 4.7k ohm c2 22 f , 50 v 1pf 1mm 21mm 9mm 1.5mm 0.5mm l1 1mm 21mm 16.5mm 150pf rf-out vgg vdd RD07MUS2B (f=763-870mhz) l1:enameled wire 7 turns,d:0.23mm,1.66mm o.d c1,c2:1000pf,100pf in parallel note:board material glass-epoxy substrate micro strip line width=1.3mm/50 ohm,er:4.8,t=0.8mm w:line width=1.0mm 6pf 8pf 1mm 12mm c1 2.5mm 1mm 1pf 6pf 12pf w 10pf 8pf w
< silicon rf power mos fet ( discrete ) > RD07MUS2B rohs compliance, silicon mosfet power transistor ,175mhz,527mhz,870 mhz, 7 w publication date : oct 2011 11 input / output impedan ce vs. frequency characteristics f zin* (mhz) (ohm) 135 5.58+j2.43 155 5.25+j5.60 175 5.01+j8.65 zin*: complex conjugate of input impedance zo=10ohm f=135mhz f=155mhz @pin=0.3w, vdd=7.2v, idq=250ma(vgg adj.) f=175mhz f zout* (mhz) (ohm) 135 3.50-j5.54 155 2.57-j2.57 175 2.06+j0.62 zout*: complex conjugate of output impedance zo=10ohm f=175mhz f=155mhz @pin=0.3w, vdd=7.2v, idq=250ma(vgg adj.) f=135mhz z out* ( f= 135 , 155 , 175 mhz) zin* ( f= 135 , 155 , 175 mhz)
< silicon rf power mos fet ( discrete ) > RD07MUS2B rohs compliance, silicon mosfet power transistor ,175mhz,527mhz,870 mhz, 7 w publication date : oct 2011 12 input / output impedance vs. frequency characteristics f zin* (mhz) (ohm) 450 2.62+j2.02 490 2.90+j3.07 520 3.29+j3.70 527 3.40+j3.81 zin*: complex conjugate of input impedance zo=10ohm f=450mhz f=490mhz f=527mhz @pin=0.4w, vdd=7.2v, idq=250ma(vgg adj.) f=520mhz f zout* (mhz) (ohm) 450 2.80+j1.07 490 2.25+j0.75 520 1.51+j1.04 527 1.36+j1.20 zout*: complex conjugate of output impedance zo=10ohm f=450mhz f=485mhz f=527mhz @pin=0.4w, vdd=7.2v, idq=250ma(vgg adj.) f=520mhz zout* ( f=450, 490, 520, 527mhz) zin* ( f=450, 490, 520, 527mhz)
< silicon rf power mos fet ( discrete ) > RD07MUS2B rohs compliance, silicon mosfet power transistor ,175mhz,527mhz,870 mhz, 7 w publication date : oct 2011 13 input / output impedance vs. frequency characteristics f zin* (mhz) (ohm) 763 1.72-j1.54 806 1.55-j0.50 817 1.46-j0.23 870 1.28+j0.95 zin*: complex conjugate of input impedance @pin=0.5w, vdd=7.2v, idq=250ma(vgg adj.) zo=10ohm f=817mhz f=806mhz f=763mhz f=870mhz f zout* (mhz) (ohm) 763 2.01+j0.43 806 2.16+j0.80 817 2.17+j0.85 870 2.17+j1.07 zout*: complex conjugate of output impedance zo=10ohm f=763mhz f=806mhz f=870mhz @pin=0.5w, vdd=7.2v, idq=250ma(vgg adj.) f=817mhz zout* ( f= 763 , 806 , 817 , 870 mhz) zin* ( f= 763 , 806 , 817 , 870 mhz)
< silicon rf power mos fet ( discrete ) > RD07MUS2B rohs compliance, silicon mosfet power transistor ,175mhz,527mhz,870 mhz, 7 w publication date : oct 2011 14 RD07MUS2B s-parameter data (@vdd=7.2v, id=250ma) freq. [mhz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) 100 0.850 -170.8 10.060 79.2 0.016 -9.1 0.745 -168.8 135 0.857 -173.2 7.300 73.1 0.016 -14.2 0.759 -169.5 150 0.858 -173.7 6.509 70.7 0.015 -15.2 0.763 -170.0 175 0.863 -174.6 5.435 66.9 0.015 -18.8 0.773 -170.7 200 0.871 -175.4 4.687 63.5 0.014 -23.8 0.781 -170.6 250 0.881 -176.8 3.556 56.7 0.013 -27.4 0.806 -171.0 300 0.889 -178.1 2.791 51.2 0.013 -32.8 0.825 -171.7 350 0.903 -179.0 2.261 45.7 0.011 -36.7 0.843 -172.4 400 0.910 -180.0 1.861 40.9 0.010 -39.7 0.859 -173.2 450 0.918 178.8 1.559 36.7 0.009 -41.9 0.874 -173.9 500 0.927 177.7 1.320 33.0 0.008 -44.9 0.888 -174.5 520 0.928 177.2 1.236 31.5 0.008 -45.1 0.893 -174.8 527 0.929 177.2 1.212 31.2 0.008 -44.2 0.894 -174.9 550 0.931 176.7 1.130 29.5 0.008 -46.4 0.896 -175.4 600 0.934 175.6 0.974 26.5 0.007 -46.4 0.909 -176.0 650 0.940 174.4 0.848 23.4 0.006 -48.0 0.915 -176.5 700 0.943 173.5 0.745 20.9 0.005 -46.0 0.921 -177.4 750 0.946 172.6 0.660 18.6 0.005 -45.9 0.928 -177.8 763 0.948 172.3 0.638 18.0 0.004 -44.9 0.931 -178.0 800 0.950 171.5 0.587 16.5 0.004 -42.0 0.931 -178.3 806 0.951 171.7 0.578 16.3 0.004 -45.4 0.931 -178.3 817 0.950 171.3 0.563 15.8 0.004 -43.6 0.933 -178.6 850 0.950 170.8 0.522 14.5 0.003 -41.8 0.934 -178.8 870 0.955 170.6 0.502 13.8 0.003 -39.4 0.935 -178.9 900 0.952 170.0 0.471 12.9 0.003 -33.7 0.941 -179.2 950 0.956 169.2 0.427 11.1 0.002 -26.6 0.943 -179.5 1000 0.957 168.4 0.387 9.7 0.002 -17.3 0.943 179.9 1050 0.960 167.7 0.353 8.1 0.002 -7.4 0.949 179.7 1100 0.961 167.1 0.323 6.9 0.002 8.9 0.949 179.6 s11 s21 s12 s22
< silicon rf power mos fet ( discrete ) > RD07MUS2B rohs compliance, silicon mosfet power transistor ,175mhz,527mhz,870 mhz, 7 w publication date : oct 2011 15 RD07MUS2B s-parameter data (@vdd=3.6v, id=250ma) freq. [mhz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) 100 0.850 -172.3 8.581 78.7 0.016 -9.3 0.782 -171.0 135 0.855 -174.2 6.239 73.0 0.016 -13.3 0.793 -171.6 150 0.856 -174.7 5.564 70.6 0.016 -17.3 0.797 -172.0 175 0.862 -175.3 4.661 66.8 0.015 -20.0 0.806 -172.5 200 0.869 -176.2 4.030 63.5 0.015 -23.1 0.812 -172.7 250 0.881 -177.4 3.057 56.8 0.014 -28.7 0.831 -173.0 300 0.887 -178.5 2.400 51.3 0.013 -32.8 0.849 -173.6 350 0.901 -179.5 1.945 46.0 0.012 -36.0 0.863 -174.3 400 0.909 179.6 1.606 41.2 0.010 -40.7 0.877 -175.0 450 0.917 178.6 1.345 37.2 0.009 -42.4 0.890 -175.5 500 0.927 177.5 1.139 33.2 0.008 -45.0 0.902 -176.2 520 0.929 177.0 1.068 31.9 0.008 -45.4 0.904 -176.3 527 0.926 176.9 1.048 31.6 0.008 -44.5 0.907 -176.4 550 0.929 176.4 0.975 29.9 0.008 -45.1 0.909 -176.9 600 0.933 175.3 0.841 26.9 0.007 -47.2 0.918 -177.4 650 0.937 174.2 0.732 23.8 0.006 -47.4 0.925 -178.0 700 0.944 173.4 0.644 21.4 0.005 -46.7 0.931 -178.6 750 0.945 172.5 0.571 19.2 0.005 -44.2 0.935 -179.0 763 0.947 172.2 0.552 18.4 0.005 -44.2 0.939 -179.1 800 0.949 171.6 0.508 17.0 0.004 -43.7 0.938 -179.3 806 0.949 171.5 0.502 16.8 0.004 -42.8 0.938 -179.5 817 0.951 171.4 0.488 16.2 0.004 -42.3 0.940 -179.6 850 0.949 170.8 0.454 15.0 0.003 -40.8 0.941 -179.8 870 0.953 170.5 0.436 14.3 0.003 -37.7 0.940 -180.0 900 0.952 169.9 0.408 13.3 0.003 -32.1 0.946 179.8 950 0.957 169.2 0.370 11.8 0.003 -25.2 0.949 179.5 1000 0.959 168.2 0.335 10.3 0.002 -18.0 0.949 179.0 1050 0.960 167.7 0.306 8.6 0.002 -6.7 0.955 178.8 1100 0.960 167.0 0.280 7.4 0.002 6.9 0.954 178.7 s11 s21 s12 s22
< silicon rf power mos fet ( discrete ) > RD07MUS2B rohs compliance, silicon mosfet power transistor ,175mhz,527mhz,870 mhz, 7 w publication date : oct 2011 16 application - note typical characteristics table (application for example ) ( these are only typical value and devices are not necessarily guaranteed at these value s. ) RD07MUS2B single-stage amplifier for analog radio solution application note frequency band vds pin po gp an-vhf-047 135 to 175mhz 7.2v 0.3w 7w 13.7 b 65% an-vhf-046 170 to 205mhz 7.2v 0.3w 7w 13.7 b 70% an-uhf-096 450 to 527mhz 7.2v 0.4w 7w 12.4db 66% an-uhf-098 400 to 470mhz 7.2v 0.4w 7w 12.5 b 60% an-900-039 763 to 870mhz 7.2v 0.5w 6.5w 11.1db 53% single-stage amplifier for digital radio solution application note frequency band vds pin po gp acp an-uhf-105 380 to 430mhz 7.2v 0.03w 3w 19.7db 35% -39 bc an-uhf-106 350 to 400mhz 7.2v 0.03w 3w 19.5db 32% -40dbc an-900-041 800 to 870mhz 3.6v 0.04w 1w 12.2 b 32% -34dbc rd01mus2 RD07MUS2B or rd01mus1 2stage RD07MUS2B with dirver pa) amplifier for analog radio solution application note frequency band vds pin po gp an-vhf-053 135 to 175mhz 7.2v 0.03w 7.1w 23.7db 47% an-uhf-097 400 to 470mhz 7.2v 0.03w 7w 23.6 b 55% an-uhf-115 450 to 530mhz 7.2v 0.03w 7.4w 23.9db 45% an-900-040 763 to 870mhz 7.2v 0.03w 7.2w 23.8 b 53% 2stage RD07MUS2B with dirver pa) amplifier for digital radio solution application note frequency band vds pin po gp acp an-uhf-116 380 to 430mhz 7.2v 0.001w 3w 34.9db 32% -39dbc
< silicon rf power mos fet ( discrete ) > RD07MUS2B rohs compliance, silicon mosfet power transistor ,175mhz,527mhz,870 mhz, 7 w publication date : oct 2011 17 a ttention: 1.high temperature ; this product might have a heat generation while op eration,please take notice that have a possibility to receive a burn to touch the operating product directly or touch the product until cold after switch off. at the near t he product,do not place the combustible material that have possibilities to arise the fire. 2. generation of high frequency power ; this product generate a high frequency power. please take notice that do not leakage the unnecessary electric wave and use t his products without cause damage for human and property per normal operation. 3. before use; before use the product,please design the equipment in consideration of the risk for human and electric wave obstacle for equipment. precautions for the use of m itsubishi silicon rf power devices: 1. the specifications of mention are not guarantee values in this data sheet. please confirm additional details regarding operation of these products from the formal specification sheet. for copies of the formal specifi cation sheets, p lease contact one of our sales offices . 2.ra series products (rf power amplifier modules) and rd series products (rf power transistors) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications. in particular, while these products are highly reliable for their designed purpose, they are not manufactured under a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical communications elements and in the application, which is base station applications and fixed station applications that oper ate with long term continuous transmission and a higher on - off frequency during transmitting, please consider the derating, the redundancy system, appropriate setting of the maintain period and others as needed. for the reliability report which is describe d about predicted operating life time of mitsubishi silicon rf products , please contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor . 3. rd series products use mosfet semiconductor technology. the y are sen sitive to esd voltage therefore a ppropriate esd precautions are required. 4. in the case of use in below than recommended frequency , t here is possibility to occur that the device is deteriorated or destroyed due to the rf - swing exceed the breakdown voltag e. 5. in order to maximize reliability of the equipment, it is better to keep the devices temperature low. it is recommended to utilize a sufficient sized heat - sink in conjunction with other cooling methods as needed (fan, etc.) to keep the channel tem perature for rd series products lower than 120deg/c(in case of tchmax=150deg/c) ,140deg/c(in case of tchmax=175deg/c) under standard conditions. 6. do not use the device at the exceeded the maximum rating condition. in case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. these results causes in fire or injury. 7. for specific precaution s regard ing assembly of these products into the equipment , please refer to the supplementary item s in the specification sheet. 8. warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any way from it?s o riginal form. 9. for additional ?s afety first ? in your circuit design and notes regarding the materials , please refer the last page of this data sheet . 10. please refer to the additional precaution s in the formal specification sheet.
< silicon rf power mos fet ( discrete ) > RD07MUS2B rohs compliance, silicon mosfet power transistor ,175mhz,527mhz,870 mhz, 7 w publication date : oct 2011 18 ? 2011 mitsubishi electric corporation. all rights reserved. keep safety first in your c ircuit designs! mitsubishi electric corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. trouble with semiconductors may lead to personal inj ury, fire or property damage. remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non - flammable material or (iii) prevention against any malfunction or mishap. notes regarding these materials ? these materials are intended as a reference to assist our customers in the selection of the mitsubishi semiconductor product bes t suited to the customer?s application; they do not convey any license under any intellectual property rights, or any other rights, belonging to mitsubishi electri c corporation or a third party. ? mitsubishi electric corporation assumes no responsibility fo r any damage, or infringement of any third - party?s rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. ? all information contained in these materials, incl uding product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these material s, and are subject to change by mitsubishi electric corporation without notice due to product improvements or other reasons. it is therefore recommended that customers contact mitsubishi electric corporation or an authorized m itsubishi semiconductor product distributor for the latest product information before purchasing a product listed herein. the information describ ed here may contain technical inaccuracies or typographical errors. mitsubishi electric corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. please also pay attention to information publis hed by mitsubishi electric corporation by various means, including the mitsubishi semiconductor home page (http: //www. m itsubishi e lectric.com/). ? when using any or all of the information contained in these materials, including product data, diagrams, charts , programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. mitsubishi electric corporation assumes no responsibility for any damage, liabilit y or other loss resulting from th e information contained herein. ? mitsubishi electric corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. pl ease contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical , aerospace, nuclear, or underse a repeater use. ? the prior written approval of mitsubishi electric corporation is necessary to reprint or reproduce in wh ole or in part these materials. ? if these products or technologies are subject to the japanese export c ontrol restrictions, they must be exported under a license from the japanese government and cannot be imported into a country other than the approved destination. any diversion or re - export contrary to the export control laws and regulations of japan and/o r the country of destination is prohibited. ? please contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor for further details on these materials or the products contained therein.

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